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| BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant (Note 4) "Green" Device (Note 5 and 6) Mechanical Data * * * * * * * * * SOT-323 Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) Drain D Gate TOP VIEW Source G Equivalent Circuit TOP VIEW S Maximum Ratings @TA = 25C unless otherwise specified Symbol VDSS VDGR VGSS ID Value 50 50 20 200 Units V V V mA Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 2) Continuous Continuous Thermal Characteristics @TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 200 625 -55 to +150 Units mW C/W C Characteristic Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: 1. 2. 3. 4. 5. 6. @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 50 0.5 100 Typ 75 1.2 1.4 Max 0.5 100 1.5 3.5 50 25 8.0 20 20 Unit V A nA V mS pF pF pF ns ns Test Condition VGS = 0V, ID = 250A VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 0.22A VDS = 25V, ID = 0.2A, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A, RGEN = 50 RGS 20K. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. BSS138W Document number: DS30206 Rev. 9 - 2 1 of 4 www.diodes.com October 2007 (c) Diodes Incorporated BSS138W 0.6 Tj = 25C 0.8 VDS = 1V -55C ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) 0.5 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 150C 25C 0.4 0.3 0.2 0.1 0 0 5 6 9 10 2 3 4 7 8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 1 2.5 0.5 1 1.5 2 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics 4.5 2.45 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 -25 5 35 65 95 125 155 Tj, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature 9 8 RDS(ON), STATIC DRAIN-SOURCE 150C VGS = 2.75V RDS(ON), NORMALIZED DRAIN-SOURCE 2.25 2.05 ON RESISTANCE () 1.85 1.65 1.45 1.25 1.05 0.85 0.65 -55 VGS = 4.5V ID = 0.075A VGS = 10V ID = 0.5A ID = 1.0mA 45 145 -5 95 Tj, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature 0 -55 8 150 C 7 RDS(ON), STATIC DRAIN-SOURCE 6 ON RESISTANCE () 5 4 3 VGS = 2.5V 7 ON RESISTANCE () 6 5 4 3 2 1 0 0.1 0.15 0.25 0.2 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current 0 0.05 -55C 25C 25 C -55C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current BSS138W Document number: DS30206 Rev. 9 - 2 2 of 4 www.diodes.com October 2007 (c) Diodes Incorporated BSS138W 6 VGS = 4.5V 150C 3.5 VGS = 10V 150C RDS(ON), STATIC DRAIN-SOURCE 5 ON RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE 3 ON RESISTANCE () 2.5 2 25C 4 3 25C 1.5 1 0.5 0 2 -55C 1 -55C 0 0 0.1 0.2 0.3 0.4 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 100 0.3 0.4 0.5 0.2 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current 0 0.1 1 VGS = 0V f = 1MHz Ciss ID, DIODE CURRENT (A) 0.1 150C -55 C C, CAPACITANCE (pF) 10 Coss 25C 0.01 Crss 0.001 0 0.2 0.4 0.8 1 1.2 0.6 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 1 0 30 5 10 15 20 25 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage Ordering Information Part Number BSS138W -7-F Notes: (Note 6 & 7) Case SOT-323 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K38 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 YM 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D BSS138W Document number: DS30206 Rev. 9 - 2 3 of 4 www.diodes.com October 2007 (c) Diodes Incorporated BSS138W Package Outline Dimensions A TOP VIEW BC G H K M J D F L SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 0 8 All Dimensions in mm Suggested Pad Layout Y Z G C Dimensions Value (in mm) Z 2.8 G 1.0 X 0.7 Y 0.9 C 1.9 E 0.65 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS138W Document number: DS30206 Rev. 9 - 2 4 of 4 www.diodes.com October 2007 (c) Diodes Incorporated |
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